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Silicon Low Leakage Diode
Low-leakage applications q Medium speed switching times q Single diode
q
BAS 116
Type BAS 116
Marking JVs
Ordering Code (tape and reel) Q62702-A919
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 54 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

Symbol VR VRM IF IFS Ptot Tj Tstg
Values 75 85 250 4.5 370 150 - 65 ... + 150
Unit V mA A mW C
330 260
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BAS 116
Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 75 V VR = 75 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA Test circuit for reverse recovery time CD trr - - 2 0.5 - 3 pF
s
Values typ. max.
Unit
V(BR) VF
75
-
-
V mV
- - - - IR - -
- - - - - -
900 1000 1100 1250 nA 5 80
Pulse generator: tp = 5 s, D = 0.05 tr = 0.6 ns, Rj = 50
Oscillograph:
R = 50 tr = 0.35 ns C 1 pF
Semiconductor Group
2
BAS 116
Forward current IF = f (TA*; TS) * Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF = f (VF) TA = 25 C
Peak forward current IFM = f (t)
Semiconductor Group
3
BAS 116
Forward voltage VF = f (TA)
Semiconductor Group
4

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